Ryo Honna

Title: Ryo Honna: Innovator in Semiconductor Technology

Introduction

Ryo Honna is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of substrates with through-silicon vias. His innovative work has led to the filing of two patents that showcase his expertise and creativity.

Latest Patents

Honna's latest patents include a method for producing a substrate having through-silicon vias and a charge-transport polymer for organic electronic elements. The first patent outlines a comprehensive method that involves preparing a silicon substrate with through-holes, forming a copper sintered body, impregnating it with a curable resin composition, and curing the resin to create an electric conductor. This method is crucial for enhancing the functionality of semiconductor devices. The second patent focuses on a charge transport polymer that features a molecular chain with terminal groups designed for improved electronic properties. This innovation is expected to advance the development of organic electronic elements.

Career Highlights

Ryo Honna is currently associated with Resonac Corporation, where he continues to push the boundaries of semiconductor technology. His work has garnered attention for its potential applications in various electronic devices. Honna's dedication to research and development has established him as a key figure in his field.

Collaborations

Honna collaborates with Iori Fukushima, a fellow innovator, to further enhance their research efforts. Their combined expertise contributes to the advancement of semiconductor technologies.

Conclusion

Ryo Honna's contributions to semiconductor technology through his innovative patents and collaborations highlight his role as a leading inventor in the industry. His work continues to pave the way for advancements in electronic devices and materials.