Ruth Shima-Edelstein

Title: Ruth Shima-Edelstein: Innovator in GaN Sensor Technology

Introduction

Ruth Shima-Edelstein is a prominent inventor based in Haifa, Israel, known for her significant contributions to the field of semiconductor technology. With a total of five patents to her name, she has made remarkable advancements in the development of gallium nitride (GaN) sensors.

Latest Patents

Among her latest patents is a method of forming a GaN sensor that features a controlled and stable threshold voltage in the sensing area. This innovative method involves fabricating a GaN-based sensor by forming a gate dielectric layer over a GaN hetero-structure, which includes a GaN layer formed over a substrate and a first barrier layer. The process includes etching the gate dielectric layer and the first barrier layer to create source and drain contact openings, followed by the formation of a metal layer that extends into these openings. Additionally, she has developed an electrostatically controlled GaN-based sensor that utilizes a GaN/AlGaN heterostructure with a two-dimensional electron gas (2DEG) channel, enhancing the sensor's performance and sensitivity.

Career Highlights

Ruth Shima-Edelstein currently works at Tower Semiconductor Ltd., where she continues to push the boundaries of semiconductor technology. Her work has been instrumental in advancing the capabilities of GaN sensors, which are critical in various applications, including power electronics and high-frequency devices.

Collaborations

Throughout her career, Ruth has collaborated with notable colleagues such as Yakov Roizin and Ronen Shaul, contributing to the innovative environment at Tower Semiconductor Ltd. Their combined expertise has fostered significant advancements in the field.

Conclusion

Ruth Shima-Edelstein's contributions to GaN sensor technology exemplify her dedication to innovation and excellence in the semiconductor industry. Her patents and collaborative efforts continue to shape the future of sensor technology.