The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2021
Filed:
Aug. 08, 2019
Tower Semiconductor Ltd., Migdal Haemek, IL;
Yakov Roizin, Afula, IL;
Carmel Sahar, Haifa, IL;
Victor Kairys, Karmiel, IL;
Ruth Shima-edelstein, Haifa, IL;
Tower Semiconductor Ltd., Migdal Haemek, IL;
Abstract
A UV sensor includes a GaN stack including a low-resistance GaN layer formed over a nucleation layer, and a high-resistance GaN layer formed over the low-resistance GaN layer, wherein a 2DEG conductive channel exists at the upper surface of the high-resistance GaN layer. An AlGaN layer is formed over the upper surface of the high-resistance GaN layer. A source contact and a drain contact extend through the AlGaN layer and contact the upper surface of the high-resistance GaN layer (and are thereby electrically coupled to the 2DEG channel). A drain depletion region extends entirely from the upper surface of the high-resistance GaN layer to the low-resistance GaN layer under the drain contact. An electrical current between the source and drain contacts is a function of UV light received by the GaN stack. An electrode is connected to the low-resistance GaN layer to allow for electrical refresh of the UV sensor.