The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2022
Filed:
Oct. 16, 2019
Tower Semiconductor Ltd., Migdal Haemek, IL;
Tower Semiconductor Ltd., Migdal Haemek, IL;
Abstract
An electrostatically controlled sensor includes a GaN/AlGaN heterostructure having a 2DEG channel in the GaN layer. Source and drain contacts are electrically coupled to the 2DEG channel through the AlGaN layer. A gate dielectric is formed over the AlGaN layer, and gate electrodes are formed over the gate dielectric, wherein each gate electrode extends substantially entirely between the source and drain contacts, wherein the gate electrodes are separated by one or more gaps (which also extend substantially entirely between the source and drain contacts). Each of the one or more gaps defines a corresponding sensing area between the gate electrodes for receiving an external influence. A bias voltage is applied to the gate electrodes, such that regions of the 2DEG channel below the gate electrodes are completely depleted, and regions of the 2DEG channel below the one or more gaps in the direction from source to drain are partially depleted.