Ruoh-Ning Tzeng

Title: Ruoh-Ning Tzeng: Innovator in Semiconductor Technology

Introduction

Ruoh-Ning Tzeng is a notable inventor based in New Taipei, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent.

Latest Patents

Tzeng holds a patent titled "Contact structure with arched top surface and fabrication method thereof." This patent describes structures and formation methods of a semiconductor device structure. The semiconductor device structure includes a gate electrode layer formed over a substrate and a gate spacer structure formed over a sidewall of the gate electrode layer. Additionally, it features a source/drain contact structure adjacent to the gate spacer structure, which is separated from the gate electrode layer by the gate spacer structure. The source/drain contact structure comprises a conductive base portion formed over a source/drain region in the substrate and a conductive capping portion with an arched top surface formed over the conductive base portion. Notably, the top surface of the conductive base portion is lower than the top surface of the gate electrode layer. Furthermore, the semiconductor device structure includes a first dielectric capping layer formed over the source/drain contact structure. Tzeng's innovative approach enhances the efficiency and performance of semiconductor devices.

Career Highlights

Ruoh-Ning Tzeng is associated with Taiwan Semiconductor Manufacturing Company Limited, a leading player in the semiconductor industry. His work at this prestigious company has allowed him to contribute to cutting-edge technologies and advancements in semiconductor manufacturing.

Collaborations

Due to space constraints, the collaborations section will be omitted.

Conclusion

Ruoh-Ning Tzeng is a prominent inventor whose work in semiconductor technology has led to valuable innovations. His patent reflects his expertise and commitment to advancing the field.