The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 29, 2026
Filed:
Feb. 02, 2023
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Ruoh-Ning Tzeng, New Taipei City, TW;
Kuo-Hua Pan, Hsinchu City, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;
Abstract
Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a gate electrode layer formed over a substrate and a gate spacer structure formed over a sidewall of the gate electrode layer. The semiconductor device structure also includes a source/drain contact structure adjacent to the gate spacer structure and separated from the gate electrode layer by the gate spacer structure. The source/drain contact structure includes a conductive base portion formed over a source/drain region in the substrate and a conductive capping portion with an arched top surface formed over the conductive base portion. The top surface of the conductive base portion is lower than the top surface of the gate electrode layer. The semiconductor device structure further includes a first dielectric capping layer formed over the source/drain contact structure.