Ruigen Ding

Title: Ruigen Ding: Innovator in Semiconductor Technology

Introduction

Ruigen Ding is a prominent inventor based in Hefei, China. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor structure and method for forming the same.

Latest Patents

Ruigen Ding holds a patent for a semiconductor structure and method for forming the same. The method involves providing a substrate and discrete conductive structures on the substrate. It includes forming an insulating layer on the upper surface of each conductive structure. Additionally, an isolation structure is formed on the side walls of each conductive structure and insulating layer. The process also involves removing part of the isolation structure located on the side wall of the insulating layer. Furthermore, part of the insulating layer that is far from the respective conductive structures is removed to create trenches surrounded by the substrate surface, isolation structures, and insulating layers. The width of each trench's opening is larger than the width of its bottom in a direction perpendicular to the side walls of the trenches.

Career Highlights

Ruigen Ding is currently associated with Changxin Memory Technologies, Inc. His work at this company has been instrumental in advancing semiconductor technologies. He has demonstrated a strong commitment to innovation and excellence in his field.

Collaborations

Some of Ruigen Ding's notable coworkers include Gongyi Wu and Xianxian Tang. Their collaborative efforts contribute to the success of their projects and the advancement of semiconductor technology.

Conclusion

Ruigen Ding is a key figure in the semiconductor industry, with a focus on innovative structures and methods. His contributions are paving the way for future advancements in technology.