The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 23, 2025
Filed:
Mar. 03, 2023
Changxin Memory Technologies, Inc., Hefei, CN;
Gongyi Wu, Hefei, CN;
Ruigen Ding, Hefei, CN;
Xianxian Tang, Hefei, CN;
Nan Deng, Hefei, CN;
Yuchen Wang, Hefei, CN;
CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei, CN;
Abstract
Semiconductor structure and method forming the same are provided. The method includes: providing a substrate and discrete conductive structures on the substrate; forming an insulating layer on an upper surface of each of the conductive structures; forming an isolation structure on a side wall of each of the conductive structures and on a side wall of each of the insulating layers; removing part of the isolation structure located on the side wall of the insulating layer; removing part of the insulating layer that is far away from a respective one of the conductive structures, to form and surround trenches by a surface of the substrate, the side walls of the isolation structures and the side walls of the insulating layers, a width of an opening of each trench being larger than a width of a bottom of each trench in a direction perpendicular to side walls of the trenches.