Changxin Memory Technologies, Inc.

Ruigen Ding

Gongyi Wu

Yuchen Wang

Nan Deng

Xianxian Tang

Semiconductor structure and method forming the same are provided. The method includes: providing a substrate and discrete conductive structures on the substrate; forming an insulating layer on an upper surface of each of the conductive structures; forming an isolation structure on a side wall of each of the conductive structures and on a side wall of each of the insulating layers; removing part of the isolation structure located on the side wall of the insulating layer; removing part of the insulating layer that is far away from a respective one of the conductive structures, to form and surround trenches by a surface of the substrate, the side walls of the isolation structures and the side walls of the insulating layers, a width of an opening of each trench being larger than a width of a bottom of each trench in a direction perpendicular to side walls of the trenches.

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Hefei, China

Ruigen Ding