Dresden, Germany

Ruchil Kumar Jain

This inventor holds 7 USPTO granted patents and 1 EPO patent. Top assignees: Globalfoundries U.S. Inc., Globalfoundries Dresden Module One LLC &Co. Kg. Active years: 2022-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ruchil Kumar Jain. Retrieved from https://idiyas.com/inventor/ruchil-kumar-jain-61ptcq82

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 85.7

 

Average Co-Inventor Count = 3.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2022-2026

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7 patents (USPTO):Explore Patents

Title: The Innovations of Ruchil Kumar Jain

Introduction

Ruchil Kumar Jain, an accomplished inventor based in Dresden, Germany, has made significant contributions to the field of semiconductor technology. With five patents to his name, his work focuses on advancing the design and functionality of field-effect transistors and high-voltage semiconductor devices.

Latest Patents

Ruchil Kumar Jain's recent patents showcase his expertise in semiconductor structures. His notable inventions include:

1. **Structures for a field-effect transistor that include a spacer structure**: This patent describes a sophisticated structure that features a silicon-on-insulator substrate, consisting of a semiconductor substrate, a dielectric layer, and a semiconductor layer. A gate electrode made from a single-crystal semiconductor material is positioned on the semiconductor layer. The innovative design also incorporates a spacer structure, consisting of two portions that strategically overlap with the dielectric layer and the semiconductor substrate.

2. **High-voltage devices integrated on a semiconductor-on-insulator substrate**: This patent focuses on semiconductor devices capable of housing high-voltage transistors. It outlines the construction of a bulk substrate with an upper surface, a semiconductor layer, and an insulating layer between the two. The creation of raised source and drain regions with an epitaxial semiconductor material signifies a substantial advancement in high-voltage semiconductor technology.

Career Highlights

Throughout his career, Ruchil has worked for notable companies including GlobalFoundries U.S. Inc. and GlobalFoundries Dresden Module One LLC & Co. Kg. His experience in these organizations has allowed him to collaborate with other experts in the field and further his research in semiconductor innovations.

Collaborations

Ruchil Kumar Jain has had the opportunity to work alongside talented individuals such as Alban Zaka and Peter Baars. These collaborations have played a pivotal role in his development as an inventor and have contributed to the success of his patents.

Conclusion

Ruchil Kumar Jain stands as a prominent figure in the realm of semiconductor innovation. His five patents reflect his commitment to advancing technology and improving the efficiency of semiconductor devices. Through his remarkable career and collaborations, he continues to leave a lasting impact on the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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