Albuquerque, NM, United States of America

Ronghua Wang

This inventor holds 1 USPTO granted patent. Top assignee: Other. Active years: 2005.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ronghua Wang. Retrieved from https://idiyas.com/inventor/ronghua-wang-zrgpb5s0

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 5.0

ph-index = 1

Forward Citations = 6(Granted Patents)


Company Filing History:

goldMedal1 out of 834,601 
Other
 patents

Years Active: 2005

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1 patent (USPTO):Explore Patents

Title: Innovations of Ronghua Wang

Introduction

Ronghua Wang is a notable inventor based in Albuquerque, NM (US). He has made significant contributions to the field of materials science, particularly in the development of advanced boride structures. His innovative approach has led to the creation of a patented method that enhances the fabrication of thin films.

Latest Patents

Ronghua Wang holds a patent for a "Method of making an icosahedral boride structure." This patent describes a method for fabricating thin films of an icosahedral boride on a silicon carbide (SiC) substrate. The icosahedral boride layer is preferably comprised of either boron phosphide (BP) or boron arsenide (BAs). The method achieves improved film crystallinity and lowered impurity concentrations. In one aspect, an epitaxially grown layer of BP with a base layer or substrate of SiC is provided. In another aspect, an epitaxially grown layer of BAs with a base layer or substrate of SiC is provided. Additionally, thin films of BP or BAs are formed on SiC using CVD or other vapor deposition means. If CVD techniques are employed, the deposition temperature is preferably above 1050°C, more preferably in the range of 1100°C to 1400°C, and still more preferably approximately 1150°C.

Career Highlights

Ronghua Wang's career is marked by his dedication to advancing material fabrication techniques. His innovative methods have garnered attention in the scientific community, contributing to the understanding and application of boride structures in various technologies.

Collaborations

Ronghua Wang has collaborated with notable colleagues, including David Zubia and David Emin. These collaborations have further enriched his research and development efforts in the field of materials science.

Conclusion

Ronghua Wang's contributions to the field of materials science, particularly through his patented method for creating icosahedral boride structures, highlight his innovative spirit and dedication to advancing technology. His work continues to influence the development of new materials and fabrication techniques.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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