The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 11, 2005
Filed:
Apr. 17, 2003
Stephen D. Hersee, Albuquerque, NM (US);
Ronghua Wang, Albuquerque, NM (US);
David Zubia, El Paso, TX (US);
Terrance L. Aselage, Cedar Crest, NM (US);
David Emin, Albuquerque, NM (US);
Stephen D. Hersee, Albuquerque, NM (US);
Ronghua Wang, Albuquerque, NM (US);
David Zubia, El Paso, TX (US);
Terrance L. Aselage, Cedar Crest, NM (US);
David Emin, Albuquerque, NM (US);
Other;
Abstract
A method for fabricating thin films of an icosahedral boride on a silicon carbide (SiC) substrate is provided. Preferably the icosahedral boride layer is comprised of either boron phosphide (BP) or boron arsenide (BAs). The provided method achieves improved film crystallinity and lowered impurity concentrations. In one aspect, an epitaxially grown layer of BPwith a base layer or substrate of SiC is provided. In another aspect, an epitaxially grown layer of BAswith a base layer or substrate of SiC is provided. In yet another aspect, thin films of BPor BAsare formed on SiC using CVD or other vapor deposition means. If CVD techniques are employed, preferably the deposition temperature is above 1050° C., more preferably in the range of 1100° C. to 1400° C., and still more preferably approximately 1150° C.