Terrance L Aselage

Title: Terrance L Aselage: Innovator in Icosahedral Boride Structures

Introduction: Terrance L Aselage is a notable inventor based in Cedar Crest, NM (US). He has made significant contributions to the field of materials science, particularly in the fabrication of advanced boride structures. His innovative approach has led to the development of a unique method for creating thin films of icosahedral boride on silicon carbide substrates.

Latest Patents: Terrance holds a patent for a method of making an icosahedral boride structure. This patent describes a process for fabricating thin films of either boron phosphide (BP) or boron arsenide (BAs) on silicon carbide (SiC) substrates. The method aims to achieve improved film crystallinity and reduced impurity concentrations. The patent outlines various aspects, including the epitaxial growth of BP or BAs layers on SiC, utilizing chemical vapor deposition (CVD) techniques at elevated temperatures, preferably between 1100°C and 1400°C.

Career Highlights: Throughout his career, Terrance has focused on advancing the understanding and application of boride materials. His work has implications for various industries, including electronics and materials engineering. With a patent count of 1 patent, he continues to push the boundaries of innovation in his field.

Collaborations: Terrance has collaborated with esteemed colleagues, including David Emin and Ronghua Wang. Their combined expertise has contributed to the successful development of his patented methods and further research in the area of boride structures.

Conclusion: Terrance L Aselage is a pioneering inventor whose work in the fabrication of icosahedral boride structures has the potential to impact various technological fields. His innovative methods and collaborations highlight the importance of research and development in advancing material sciences.