This inventor holds 3 USPTO granted patents. Top assignees: The United States of America as Represented by the United States, Other. Active years: 1986-2005.
Company Filing History:
1 out of 3,975 
2 out of 834,411 Years Active: 1986-2005
Title: David Emin: Innovator in Icosahedral Boride Structures
Introduction
David Emin is a notable inventor based in Albuquerque, NM (US). He has made significant contributions to the field of materials science, particularly in the development of icosahedral boride structures. With a total of 3 patents to his name, Emin's work has implications for both semiconductor technology and energy conversion.
Latest Patents
Emin's latest patents include a method for making an icosahedral boride structure. This method involves fabricating thin films of an icosahedral boride on a silicon carbide (SiC) substrate. The icosahedral boride layer is preferably made of either boron phosphide (BP) or boron arsenide (BAs). The method achieves improved film crystallinity and reduced impurity concentrations. Another significant patent is for a beta cell device that converts beta-particle energies into electrical energy. This device incorporates an icosahedral boride compound, which self-heals and resists degradation from radiation damage.
Career Highlights
Throughout his career, David Emin has worked with various organizations, including the United States of America as represented by the United States. His innovative approaches have led to advancements in the understanding and application of boride compounds in technology.
Collaborations
Emin has collaborated with notable individuals in his field, including Ronghua Wang and David Zubia. These partnerships have contributed to the successful development of his patents and innovations.
Conclusion
David Emin's work in the field of icosahedral boride structures showcases his innovative spirit and dedication to advancing technology. His contributions have the potential to impact various applications in materials science and energy conversion.