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The United States of America As Represented by the United States

David Emin

Stephen D Hersee

David Zubia

Terrance L Aselage

Terrence L Aselage

Ronghua Wang

John P Van Devender

A method for fabricating thin films of an icosahedral boride on a silicon carbide (SiC) substrate is provided. Preferably the icosahedral boride layer is comprised of either boron phosphide (BP) or boron arsenide (BAs). The provided method achieves improved film crystallinity and lowered impurity concentrations. In one aspect, an epitaxially grown layer of BPwith a base layer or substrate of SiC is provided. In another aspect, an epitaxially grown layer of BAswith a base layer or substrate of SiC is provided. In yet another aspect, thin films of BPor BAsare formed on SiC using CVD or other vapor deposition means. If CVD techniques are employed, preferably the deposition temperature is above 1050&#xb0; C., more preferably in the range of 1100&#xb0; C. to 1400&#xb0; C., and still more preferably approximately 1150&#xb0; C.

Method of making an icosahedral boride structure

A beta cell for converting beta-particle energies into electrical energy having a semiconductor junction that incorporates an icosahedral boride compound selected from B As , B P , elemental boron having an &agr;-rhombohedral structure, elemental boron having a &bgr;-rhombohedral structure, and boron carbides of the chemical formula B C , where 0.15<x<1.7, a beta radiation source, and means for transmitting electrical energy to an outside load. The icosahedral boride compound self-heals, resisting degradation from radiation damage.

Beta cell device using icosahedral boride compounds

A reusable fast opening switch for transferring energy, in the form of a high power pulse, from an electromagnetic storage device such as an inductor into a load. The switch is efficient, compact, fast and reusable. The switch comprises a ferromagnetic semiconductor which undergoes a fast transition between conductive and insulating states at a critical temperature and which undergoes the transition without a phase change in its crystal structure. A semiconductor such as europium rich europhous oxide, which undergoes a conductor to insulator transition when it is joule heated from its conductor state, can be used to form the switch.

Reusable fast opening switch

Growing community of inventors

Albuquerque, NM, United States of America

David Emin