Other

Ronghua Wang

Stephen D Hersee

David Zubia

David Emin

Terrance L Aselage

A method for fabricating thin films of an icosahedral boride on a silicon carbide (SiC) substrate is provided. Preferably the icosahedral boride layer is comprised of either boron phosphide (BP) or boron arsenide (BAs). The provided method achieves improved film crystallinity and lowered impurity concentrations. In one aspect, an epitaxially grown layer of BPwith a base layer or substrate of SiC is provided. In another aspect, an epitaxially grown layer of BAswith a base layer or substrate of SiC is provided. In yet another aspect, thin films of BPor BAsare formed on SiC using CVD or other vapor deposition means. If CVD techniques are employed, preferably the deposition temperature is above 1050&#xb0; C., more preferably in the range of 1100&#xb0; C. to 1400&#xb0; C., and still more preferably approximately 1150&#xb0; C.

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Albuquerque, NM, United States of America

Ronghua Wang