Suzhou, China

Rong Yang

This inventor holds 2 USPTO granted patents. Top assignee: Innoscience (Suzhou) Technology Co., Ltd.. Active years: 2023-2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Rong Yang. Retrieved from https://idiyas.com/inventor/rong-yang-pd3jvrgm

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.8

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2023-2024

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2 patents (USPTO):Explore Patents

Title: Innovations of Rong Yang in GaN-Based Devices

Introduction

Rong Yang is a notable inventor based in Suzhou, China, recognized for his contributions to the field of GaN-based devices. With a total of two patents to his name, he has made significant advancements in measuring the performance and reliability of these devices.

Latest Patents

Rong Yang's latest patents include a "System and method for measuring intermittent operating life of GaN-based device." This invention provides a comprehensive system operable in various modes, including stressing, cooling, and measuring. It employs a power regulation approach to ensure consistent temperature increases during testing, thereby enhancing measurement accuracy by controlling the junction temperature of the device. His second patent, "Apparatus and method for measuring dynamic on-resistance of GaN-based device," outlines an innovative apparatus that utilizes a control terminal and switching device to accurately measure the dynamic on-resistance of a device under test.

Career Highlights

Rong Yang is currently employed at Innoscience Technology Co., Ltd., where he continues to push the boundaries of technology in the semiconductor industry. His work focuses on improving the reliability and efficiency of GaN-based devices, which are crucial for various applications in electronics.

Collaborations

Rong Yang collaborates with talented coworkers, including Sichao Li and Chunhua Zhou, who contribute to the innovative environment at Innoscience Technology Co., Ltd. Their combined expertise fosters a culture of creativity and advancement in their projects.

Conclusion

Rong Yang's innovative work in the field of GaN-based devices showcases his commitment to enhancing technology through precise measurement techniques. His patents reflect a deep understanding of the challenges in the semiconductor industry and offer solutions that pave the way for future advancements.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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