Rong-Ching Chen

Title: Innovations of Rong-Ching Chen

Introduction

Rong-Ching Chen is a notable inventor based in Taichung, Taiwan. He has made significant contributions to the field of semiconductor technology. With a total of 2 patents, his work focuses on integrating advanced semiconductor devices.

Latest Patents

One of his latest patents is titled "Method of integrating high voltage metal oxide semiconductor devices and submicron metal oxide semiconductor devices." This invention provides a method for integrating at least one high voltage metal oxide semiconductor device and at least one submicron metal oxide semiconductor device on a substrate. The method involves providing the substrate, forming a plurality of shallow trenches with varying depths on the substrate's surface, and creating silicon oxide layers that fill these trenches, with the tops shaped like mushrooms.

Another significant patent is the "Method for forming single-level electrically erasable and programmable read-only memory operated in an environment with high/low-voltage." This invention begins with providing a semiconductor substrate, followed by forming first and second wells with a first conductivity. These wells are used to create a floating gate for single-level EEPROM and a low-voltage device, while also separating the high-voltage device. The high-voltage device can operate in an electric field of about 18V.

Career Highlights

Rong-Ching Chen is currently employed at United Microelectronics Corporation, where he continues to innovate in semiconductor technology. His work has been instrumental in advancing the capabilities of semiconductor devices.

Collaborations

He has collaborated with notable coworkers, including Ching-Chun Huang and Jy-Hwang Lin, contributing to various projects and innovations in the field.

Conclusion

Rong-Ching Chen's contributions to semiconductor technology through his patents and work at United Microelectronics Corporation highlight his role as a significant inventor in the industry. His innovative methods continue to influence the development of advanced semiconductor devices.