The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 28, 2006
Filed:
Dec. 15, 2003
Ching-chun Huang, Tai-Chung, TW;
Ming-hsien Huang, Hsin-Chu, TW;
Rong-ching Chen, Tai-Chung, TW;
Jy-hwang Lin, Hsin-Chu, TW;
Ching-Chun Huang, Tai-Chung, TW;
Ming-Hsien Huang, Hsin-Chu, TW;
Rong-Ching Chen, Tai-Chung, TW;
Jy-Hwang Lin, Hsin-Chu, TW;
United Microelectronics Corp., Hsin-Chu, TW;
Abstract
The present invention provides a method of integrating at least one high voltage metal oxide semiconductor device and at least one Submicron metal oxide semiconductor device on a substrate. The method comprises: providing the substrate, forming a plurality of shallow trenches having different depths on a surface of the substrate, and forming a plurality of silicon oxide layers filling up the shallow trenches, and a top of each of the silicon oxide layers being in the shape of a mushroom.