Hsinchu, Taiwan

Rong-Chang Feng

This inventor holds 4 USPTO granted patents. Top assignee: Industrial Technology Research Institute. Active years: 2006-2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Rong-Chang Feng. Retrieved from https://idiyas.com/inventor/rong-chang-feng

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 25.0

Average Co-Inventor Count = 5.3

ph-index = 2

Forward Citations = 8(Granted Patents)


Company Filing History:


Years Active: 2006-2011

Loading Chart...
4 patents (USPTO):Explore Patents

Title: The Innovative Journey of Rong-Chang Feng

Introduction:

Rong-Chang Feng, a distinguished inventor hailing from Hsinchu, Taiwan, has made significant contributions to the field of technology through his groundbreaking innovations and patents.

Latest Patents:

Feng's latest patents showcase his expertise in areas such as semiconductor technology, renewable energy, and advanced materials. His commitment to pushing the boundaries of innovation is evident in the patents he continues to secure.

Career Highlights:

With a career spanning over two decades, Rong-Chang Feng has established himself as a visionary in the tech industry. His work has not only revolutionized existing technologies but has also paved the way for future advancements in various sectors.

Collaborations:

Throughout his career, Feng has collaborated with leading research institutions, universities, and tech companies to bring his inventions to life. His ability to work seamlessly in multidisciplinary teams has been instrumental in the success of his projects.

Conclusion:

In conclusion, Rong-Chang Feng's relentless pursuit of innovation and his passion for creating cutting-edge technologies have solidified his position as a trailblazer in the world of inventors. His contributions continue to inspire the next generation of innovators to push the boundaries of what is possible in the realm of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…