This inventor holds 1 USPTO granted patent. Top assignees: Cree Research Inc., General Instrument Corporation. Active years: 1991.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:


Years Active: 1991
Title: Roman Hamerski: Innovator in High-Temperature Diode Technology
Introduction
Roman Hamerski is a notable inventor based in Smithtown, NY (US). He has made significant contributions to the field of semiconductor technology, particularly with his innovative work on high-temperature diodes. His expertise and inventions have paved the way for advancements in various applications requiring reliable performance under extreme conditions.
Latest Patents
Hamerski holds a patent for a "Packaged diode for high temperature operation." This invention is designed for operation at temperatures exceeding 200°C and can withstand temperature excursions ranging from -65°C to at least 350°C. The diode features p-n portions with a p-n junction, constructed from a semiconductor material that maintains satisfactory characteristics at these elevated temperatures. The design includes ohmic contacts on either side of the junction, with electrodes made from electrically conductive materials that have a thermal expansion coefficient similar to that of the semiconductor. This ensures structural support and reliable electrical contact. The leads are also made from conductive materials and are joined to the electrodes with an alloy that remains stable under high temperatures. The entire assembly is hermetically sealed with packaging material to protect the diode.
Career Highlights
Throughout his career, Roman Hamerski has worked with prominent companies such as General Instrument Corporation and Cree Research Inc. His experience in these organizations has contributed to his development of innovative technologies in the semiconductor industry.
Collaborations
Some of his notable coworkers include John Adam Edmond and Douglas G Waltz. Their collaboration has likely fostered an environment of innovation and creativity, leading to advancements in their respective fields.
Conclusion
Roman Hamerski's contributions to high-temperature diode technology exemplify his commitment to innovation in the semiconductor industry. His patent and career achievements highlight the importance of reliable technology in extreme conditions.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile