The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 1991
Filed:
Dec. 07, 1989
John A Edmond, Apex, NC (US);
Douglas G Waltz, Durham, NC (US);
Muni M Mitchell, Huntington, NY (US);
Mohammad Sedigh, New York, NY (US);
Roman Hamerski, Smithtown, NY (US);
General Instrument Corporation, , NY (US);
Cree Research, Inc., , NC (US);
Abstract
The invention is a packaged diode suitable for operation at temperatures above 200.degree. C. and during temperature excursions between -65.degree. C. and at least 350.degree. C. The invention comprises a diode having respective p-n portions with a p-n junction therebetween, and formed of a semiconductor material that is stable and will exhibit satisfactory diode characteristics at such temperatures. Ohmic contacts are made to the opposite sides of the junction diode and to the respective p and n portions of the diode. An electrode adjacent each of the ohmic contacts is formed of an electrically conductive material that has a coefficient of thermal expansion similar to the coefficient of thermal expansion of the semiconductor material for providing structural support to the junction diode and electrical contact therewith. A lead contacts each of the electrodes opposite each electrode's contact with the diode. Each lead is formed of an electrically conductive material and is joined to the respective electrode by an alloy that likewise remains physically and electrically stable at temperatures greater than 200.degree. C. and during repetitive operating cycles over temperature excursions between about -65.degree. C. and 350.degree. C. A packaging material surrounds the junction diode and portions of the electrode to hermetically seal it.