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For the Inventor, By the Inventor

Richardson, TX, United States of America

Roger A Haken

USPTO Granted Patents = 41

Average Co-Inventor Count = 1.9

ph-index = 26

Forward Citations = 1,773(Granted Patents)


Location History:

  • Richardson, TX (US) (1984 - 1994)
  • Dallas, TX (US) (1988 - 1995)

Company Filing History:

goldMedal40 out of 29,279 
 
Texas Instruments Corporation
 patents
silverMedal1 out of 832,891 
Other
 patents

Years Active: 1984-1995

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Areas of Expertise:
Silicided MOS Transistor
DRAM Process
VLSI Interconnect
Bistable Logic Device
CMOS Technology
Integrated Circuit Fabrication
Floating Gate Memory
High-Voltage CMOS Process
Polysilicon Capacitors
Nonvolatile Memory Array
Thin Dielectrics
Trench Transistors
41 patents (USPTO):Explore Patents
1. 5389809 - Silicided MOS transistor (1995-02-14),
2. 5359216 - DRAM process with improved polysilicon-to-polysilicon capacitor and the (1994-10-25),
3. 5302539 - VLSI interconnect method and structure (1994-04-12),
4. 5244825 - DRAM process with improved poly-to-poly capacitor (1993-09-14),
5. 5141890 - CMOS sidewall oxide-lightly doped drain process (1992-08-25),
6. 5122846 - Bistable logic device using trench transistors (1992-06-16),
7. 5098192 - DRAM with improved poly-to-poly capacitor (1992-03-24),
8. 5077228 - Process for simultaneous formation of trench contact and vertical (1991-12-31),
9. 5024960 - Dual LDD submicron CMOS process for making low and high voltage (1991-06-18),
10. 5021851 - NMOS source/drain doping with both P and As (1991-06-04),
11. 5010032 - Process for making CMOS device with both P+ and N+ gates including (1991-04-23),
12. 4987093 - Through-field implant isolated devices and method (1991-01-22),
13. 4975756 - SRAM with local interconnect (1990-12-04),
14. 4949154 - Thin dielectrics over polysilicon (1990-08-14),
15. 4931411 - Integrated circuit process with TiN-gate transistor (1990-06-05),

Title: Roger A Haken: A Brilliant Inventor from Richardson, TX

Introduction:

In the world of innovations and patents, one name that stands out is Roger A Haken. Hailing from Richardson, TX, Roger has gained recognition for his exceptional work in the field of semiconductor technology. With an impressive portfolio of 41 patents and a profound impact on the industry, Roger's contributions have been remarkable. Let's delve deeper into his latest patents, career highlights, collaborations, and conclude with the significant mark he has left on the innovation landscape.

Latest Patents:

Among Roger's latest patents is the "Silicided MOS transistor." This patent describes a novel process for forming N-channel MOS sources and drains by utilizing both phosphorus and arsenic implantation. The unique diffusivity of phosphorus allows for gradual conductivity reduction, minimizing electric potential gradient and eliminating issues like impact ionization and hot carrier effects. This results in increased breakdown voltage and improved performance. The implementation of self-aligned silicided source/drain regions and a peripheral phosphorus band after annealing further enhances the efficiency of this innovation.

Another notable patent is the "DRAM process with improved polysilicon-to-polysilicon capacitor." This patent introduces a new method for fabricating DRAM cells, focusing on achieving high specific capacitance and integrity between the first poly storage gate and the upper capacitor plate. By utilizing an oxide/nitride composite dielectric that undergoes reoxidation, the invention ensures high dielectric integrity, uniformity, and reproducibility, ultimately leading to superior performance.

Career Highlights:

Throughout his career, Roger A Haken has made significant contributions to the semiconductor industry, particularly during his tenure at Texas Instruments Corporation. While at TI, he played a vital role in advancing MOS transistor technology, developing innovative fabrication processes that improved transistor performance and reliability. Roger's work has contributed to the growth and evolution of the industry, and his patents have paved the way for future advancements.

Collaborations:

During his journey, Roger has had the privilege of collaborating with notable individuals in the field. Thomas C Holloway and Thomas E Tang are among his esteemed colleagues with whom he has worked closely. Together, they have achieved breakthroughs in semiconductor technology, driving progress and innovation.

Conclusion:

Roger A Haken's career has been distinguished by his numerous patents and technical contributions, particularly in semiconductor technology. His ability to develop innovative processes and solutions has earned him a well-deserved reputation in the industry. From his work at Texas Instruments Corporation to his collaborations with exceptional minds, Roger's impact on the field of inventions and patents has been significant. His latest patents, such as the Silicided MOS transistor and the improved DRAM process, demonstrate his ingenuity and dedication to advancing the semiconductor industry. As we look ahead, it is clear that Roger's visionary approach will continue to inspire and shape future innovations in the field.

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