The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 1990
Filed:
Mar. 30, 1989
Roger A Haken, Richardson, TX (US);
Texas Instruments, Incorporated, Dallas, TX (US);
Abstract
The present invention teaches a new method for formation of thin dielectrics over polysilicon. This technique permits the fabrication of poly-to-poly capacitors with high specific capacitance (capacitance per unit area). This technique is completely compatible with standard MOS dual poly regrown gate oxide processes. The high value of specific capacitance is achieved by using a composite dielectric which has high dielectric integrity and whose thickness is completely independent of the formation of the regular gate oxide under the second poly. No extra mask steps are required. The composite dielectric is formed as a grown or deposited oxide followed by a deposited nitride which is then reoxidized. Optionally, a second oxide is deposited before reoxidation performed.