Taipei, Taiwan

Robin Christine Hwang


Average Co-Inventor Count = 6.0

ph-index = 1


Company Filing History:


Years Active: 2025

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3 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Robin Christine Hwang

Introduction

Robin Christine Hwang is a prominent inventor based in Taipei, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of high electron mobility transistors. With a total of 3 patents to his name, Hwang continues to push the boundaries of innovation in his field.

Latest Patents

Hwang's latest patents include advanced designs for high electron mobility transistor devices. One of his notable inventions features a high electron mobility transistor device that includes a channel layer, a first barrier layer, a gate structure, and a spacer. The first barrier layer is strategically placed on the channel layer, while the gate structure comprises a first P-type gallium nitride layer, a second barrier layer, and a second P-type gallium nitride layer. The design ensures that the width of the second P-type gallium nitride layer is smaller than that of the first, enhancing the device's performance. Another patent also focuses on a high electron mobility transistor device, which includes a channel layer, a first barrier layer, and a P-type gallium nitride layer, with specific thickness variations to optimize functionality.

Career Highlights

Hwang is currently employed at Powerchip Semiconductor Manufacturing Corporation, where he applies his expertise in semiconductor technology. His work has been instrumental in advancing the capabilities of high electron mobility transistors, which are crucial for various electronic applications.

Collaborations

Throughout his career, Hwang has collaborated with notable colleagues, including Jih-Wen Chou and Chih-Hung Lu. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Robin Christine Hwang's contributions to semiconductor technology, particularly in high electron mobility transistors, highlight his role as a leading inventor in the field. His innovative patents and collaborations continue to influence the industry and pave the way for future advancements.

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