The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 12, 2025
Filed:
Apr. 13, 2023
Powerchip Semiconductor Manufacturing Corporation, Hsinchu, TW;
Robin Christine Hwang, Taipei, TW;
Jih-Wen Chou, Hsinchu, TW;
Hwi-Huang Chen, Hsinchu, TW;
Hsin-Hong Chen, Hsinchu, TW;
Yu-Jen Huang, Hsinchu, TW;
Chih-Hung Lu, Taichung, TW;
Powerchip Semiconductor Manufacturing Corporation, Hsinchu, TW;
Abstract
A HEMT device including a substrate structure, a channel layer, a barrier layer, a gate electrode, a drain electrode, a first source field plate, a second source field plate, and a dielectric structure is provided. The first source field plate extends from the second side of the gate electrode to the first side of the gate electrode. The second source field plate is located on the first side of the gate electrode and is located between the drain electrode and the first source field plate. There is a gap between the first source field plate and the second source field plate. The first source field plate has an end adjacent to the gap. The thickness of the dielectric structure located directly below the second source field plate is greater than the thickness of the dielectric structure located directly below the end of the first source field plate.