Ann Arbor, MI, United States of America

Robert N Sacks




Average Co-Inventor Count = 3.4

ph-index = 1

Forward Citations = 4(Granted Patents)


Location History:

  • Hilliard, OH (US) (2001)
  • Ann Arbor, MI (US) (2015)

Company Filing History:


Years Active: 2001-2015

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2 patents (USPTO):Explore Patents

Title: The Innovations of Robert N Sacks

Introduction

Robert N Sacks is a notable inventor based in Ann Arbor, MI (US). He has made significant contributions to the field of semiconductor technology, holding two patents that showcase his innovative spirit and technical expertise.

Latest Patents

Sacks' latest patents include a photoconductive device, which features a semiconductor structure comprising a GaAs or InP substrate, an InGaAs epitaxial layer, and a wider bandgap epitaxial layer as a cap layer. His other patent focuses on a highly-doped P-type contact for high-speed, front-side illuminated photodiodes, which involves a semiconductor p-i-n photodiode with a substrate, an n layer, an i layer, and a carbon-doped p layer.

Career Highlights

Robert N Sacks is currently associated with Picometrix, Inc., where he continues to push the boundaries of innovation in photonic devices. His work has been instrumental in advancing the capabilities of semiconductor technologies.

Collaborations

Throughout his career, Sacks has collaborated with esteemed colleagues such as Steven L Williamson and Janis A Valdmanis. These partnerships have fostered a creative environment that has led to groundbreaking advancements in their field.

Conclusion

Robert N Sacks exemplifies the spirit of innovation through his patents and collaborations in semiconductor technology. His contributions continue to

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