Picometrix, Inc.

Robert N Sacks

Steven L Williamson

Matthew M Jazwiecki

Kadhair Al Hemyari

Janis A Valdmanis

Mathew M Jazwiecki

A semiconductor structure includes a GaAs or InP substrate, an InGaAs epitaxial layer grown on the substrate, where x is greater than about 0.01 and less than about 0.53, and a wider bandgap epitaxial layer grown as a cap layer on top of the InGaAs epitaxial layer.

Photoconductive device

A semiconductor p-i-n photodiode having a substrate, an n layer coupled to the surface of said substrate, an i layer coupled to the surface of said n layer, and a carbon doped p layer coupled to the surface of said i layer.

Growing community of inventors

Ann Arbor, MI, United States of America

Robert N Sacks