The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2015
Filed:
Dec. 07, 2005
Applicants:
Robert N. Sacks, Ann Arbor, MI (US);
Matthew M. Jazwiecki, Canton, MI (US);
Steven Williamson, Ann Arbor, MI (US);
Inventors:
Robert N. Sacks, Ann Arbor, MI (US);
Matthew M. Jazwiecki, Canton, MI (US);
Steven Williamson, Ann Arbor, MI (US);
Assignee:
PICOMETRIX, LLC, Ann Arbor, MI (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/09 (2006.01); H01L 31/0304 (2006.01); H01L 29/737 (2006.01);
U.S. Cl.
CPC ...
H01L 31/09 (2013.01); H01L 29/7371 (2013.01); H01L 31/03046 (2013.01);
Abstract
A semiconductor structure includes a GaAs or InP substrate, an InGaAs epitaxial layer grown on the substrate, where x is greater than about 0.01 and less than about 0.53, and a wider bandgap epitaxial layer grown as a cap layer on top of the InGaAs epitaxial layer.