Robert James Burke

This inventor holds 32 USPTO granted patents and 8 published patent applications, primarily in Semiconductor Fabrication. Top assignee: Micron Technology Incorporated. Active years: 1983-2014.

USPTO Granted Patents = 32 (Patent Applications = 8)

% Patents Active = 87.5

Average Co-Inventor Count = 2.9

ph-index = 11

Forward Citations = 580(Granted Patents)

Location History:

Quincy, MA (US) (1983)
Boise, ID (US) (1997 - 2014)

Company Filing History:

31 out of 39,149

Micron Technology Incorporated

patents

where one patent can have more than one assignee

Years Active: 1983-2014

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Areas of Expertise:

Field Effect Transistor

Semiconductor Assembly

Contact Structure

Polysilicon

Capacitor

Thermal Processing

Reflectance Method

Memory Array

High Density Logic

Metal Silicide

Opaque Materials

Process Calibration

32 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8802520 - Method of forming a field effect transistor having source/drain material over insulative material (2014-08-12),

2. 8440515 - Method of forming a field effect transistor (2013-05-14),

3. 8138039 - Vertical wrap-around-gate field-effect-transistor for high density, low voltage logic and memory array (2012-03-20),

4. 7936000 - Vertical wrap-around-gate field-effect-transistor for high density, low voltage logic and memory array (2011-05-03),

5. 7528439 - Vertical wrap-around-gate field-effect-transistor for high density, low voltage logic and memory array (2009-05-05),

6. 7524756 - Process of forming a semiconductor assembly having a contact structure and contact liner (2009-04-28),

7. 7470576 - Methods of forming field effect transistor gate lines (2008-12-30),

8. 7465616 - Method of forming a field effect transistor (2008-12-16),

9. 7374990 - Vertical wrap-around-gate field-effect-transistor for high density, low voltage logic and memory array (2008-05-20),

10. 7241655 - Method of fabricating a vertical wrap-around-gate field-effect-transistor for high density, low voltage logic and memory array (2007-07-10),

11. 7214613 - Cross diffusion barrier layer in polysilicon (2007-05-08),

12. 7170174 - Contact structure and contact liner process (2007-01-30),

13. 7166896 - Cross diffusion barrier layer in polysilicon (2007-01-23),

14. 7118950 - Method of forming a field effect transistor (2006-10-10),

15. 7071043 - Methods of forming a field effect transistor having source/drain material over insulative material (2006-07-04),

Title: The Inventor Robert James Burke: Pioneering Innovations in Boise

Introduction: Robert James Burke is a distinguished inventor based in Boise, ID, known for his groundbreaking contributions to various fields.

Latest Patents: Robert James Burke holds several patents in the areas of renewable energy technologies, medical devices, and consumer electronics.

Career Highlights: With a career spanning over two decades, Robert James Burke has been at the forefront of innovation, leading research and development teams in creating cutting-edge solutions.

Collaborations: Throughout his career, Robert James Burke has collaborated with leading universities, research institutions, and tech companies to bring his inventions to life.

Conclusion: Robert James Burke's passion for innovation and his relentless pursuit of excellence continue to inspire the next generation of inventors.