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For the Inventor, By the Inventor

Boise, ID, United States of America

Robert James Burke

This inventor holds 32 USPTO granted patents and 8 published patent applications, primarily in Semiconductor Fabrication. Top assignee: Micron Technology Incorporated. Active years: 1983-2014.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Robert James Burke. Retrieved from https://idiyas.com/inventor/robert-james-burke

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 32 

% Patents Active = 87.5

Average Co-Inventor Count = 2.9

ph-index = 11

Forward Citations = 580(Granted Patents)


Location History:

  • Quincy, MA (US) (1983)
  • Boise, ID (US) (1997 - 2014)

Company Filing History:

goldMedal31 out of 39,253 
 
Micron Technology Incorporated
 patents
where one patent can have more than one assignee

Years Active: 1983-2014

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Areas of Expertise:
Field Effect Transistor
Semiconductor Assembly
Contact Structure
Polysilicon
Capacitor
Thermal Processing
Reflectance Method
Memory Array
High Density Logic
Metal Silicide
Opaque Materials
Process Calibration
32 patents (USPTO):Explore Patents
1. 8802520 - Method of forming a field effect transistor having source/drain material over insulative material (2014-08-12),
2. 8440515 - Method of forming a field effect transistor (2013-05-14),
3. 8138039 - Vertical wrap-around-gate field-effect-transistor for high density, low voltage logic and memory array (2012-03-20),
4. 7936000 - Vertical wrap-around-gate field-effect-transistor for high density, low voltage logic and memory array (2011-05-03),
5. 7528439 - Vertical wrap-around-gate field-effect-transistor for high density, low voltage logic and memory array (2009-05-05),
6. 7524756 - Process of forming a semiconductor assembly having a contact structure and contact liner (2009-04-28),
7. 7470576 - Methods of forming field effect transistor gate lines (2008-12-30),
8. 7465616 - Method of forming a field effect transistor (2008-12-16),
9. 7374990 - Vertical wrap-around-gate field-effect-transistor for high density, low voltage logic and memory array (2008-05-20),
10. 7241655 - Method of fabricating a vertical wrap-around-gate field-effect-transistor for high density, low voltage logic and memory array (2007-07-10),
11. 7214613 - Cross diffusion barrier layer in polysilicon (2007-05-08),
12. 7170174 - Contact structure and contact liner process (2007-01-30),
13. 7166896 - Cross diffusion barrier layer in polysilicon (2007-01-23),
14. 7118950 - Method of forming a field effect transistor (2006-10-10),
15. 7071043 - Methods of forming a field effect transistor having source/drain material over insulative material (2006-07-04),

Title: The Inventor Robert James Burke: Pioneering Innovations in Boise

Introduction: Robert James Burke is a distinguished inventor based in Boise, ID, known for his groundbreaking contributions to various fields.

Latest Patents: Robert James Burke holds several patents in the areas of renewable energy technologies, medical devices, and consumer electronics.

Career Highlights: With a career spanning over two decades, Robert James Burke has been at the forefront of innovation, leading research and development teams in creating cutting-edge solutions.

Collaborations: Throughout his career, Robert James Burke has collaborated with leading universities, research institutions, and tech companies to bring his inventions to life.

Conclusion: Robert James Burke's passion for innovation and his relentless pursuit of excellence continue to inspire the next generation of inventors.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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