The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 08, 2007
Filed:
Aug. 31, 2004
Sanh D. Tang, Boise, ID (US);
Chih-chen Cho, Boise, ID (US);
Robert Burke, Boise, ID (US);
Anuradha Iyengar, Stafford, TX (US);
Eugene R. Gifford, Kuna, ID (US);
Sanh D. Tang, Boise, ID (US);
Chih-Chen Cho, Boise, ID (US);
Robert Burke, Boise, ID (US);
Anuradha Iyengar, Stafford, TX (US);
Eugene R. Gifford, Kuna, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
A semiconductor device includes a cross diffusion barrier layer sandwiched between a gate layer and an electrode layer. The gate layer has a first gate portion of doped polysilicon of first conductivity type adjacent to a second gate portion doped polysilicon of second conductivity type. The cross diffusion barrier layer includes a combination of silicon and nitrogen. The cross diffusion barrier layer adequately prevents cross diffusion between the first and second gate portions while causing no substantial increase in the resistance of the gate layer.