Williston, VT, United States of America

Robert J Gauthier

This inventor holds 1 USPTO granted patent, plus 1 CIPO patent. Top assignee: Globalfoundries U.S. Inc.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Robert J Gauthier. Retrieved from https://idiyas.com/inventor/robert-j-gauthier-laeniq6m

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0


Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: The Innovations of Robert J. Gauthier

Introduction

Robert J. Gauthier is an accomplished inventor based in Williston, Vermont. He has made significant contributions to the field of electrostatic discharge protection circuits. With a focus on innovative device structures, Gauthier has secured a patent that showcases his expertise and creativity.

Latest Patents

Gauthier holds a patent for a "Gated protection device structures for an electrostatic discharge protection circuit." This invention includes device structures that feature a silicon-controlled rectifier and methods for forming such structures. The design comprises a first well and a second well within a semiconductor substrate. It also includes a first terminal with a first doped region in the first well and a second terminal with a second doped region in the second well. The first well and the second doped region possess a first conductivity type, while the second well and the first doped region have a second conductivity type that is opposite to the first. The interface between the two wells is crucial for the device's functionality. Additionally, a third doped region includes portions in both wells, along with a gate structure that overlaps with part of the second well.

Career Highlights

Gauthier is currently employed at GlobalFoundries U.S. Inc., where he continues to innovate and develop advanced semiconductor technologies. His work has been instrumental in enhancing the reliability and performance of electronic devices.

Collaborations

Throughout his career, Gauthier has collaborated with talented professionals, including Souvick Mitra and Prantik Mahajan. These partnerships have fostered a creative environment that encourages the development of cutting-edge technologies.

Conclusion

Robert J. Gauthier's contributions to the field of electrostatic discharge protection circuits exemplify his dedication to innovation. His patent and work at GlobalFoundries U.S. Inc. highlight his role as a significant figure in the semiconductor industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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