logo

For the Inventor, By the Inventor

Carp, Canada

Robert F Harland

USPTO Granted Patents = 12

Average Co-Inventor Count = 4.2

ph-index = 8

Forward Citations = 298(Granted Patents)


Location History:

  • Carp, CA (1993 - 2005)
  • Salt Spring Island, CA (2008)

Company Filing History:

goldMedal11 out of 690 
 
Mosaid Technologies Corporation
 patents
silverMedal1 out of 12 
 
Mosaid, Inc.
 patents

Years Active: 1993-2008

Loading Chart...
12 patents (USPTO):Explore Patents
1. RE40552 - Dynamic random access memory using imperfect isolating transistors (2008-10-27),
2. 6980448 - DRAM boosted voltage supply (2005-12-27),
3. 6614705 - Dynamic random access memory boosted voltage supply (2003-09-02),
4. 6580654 - Boosted voltage supply (2003-06-17),
5. 6236581 - High voltage boosted word line supply charge pump and regulator for DRAM (2001-05-22),
6. 6055201 - High voltage boosted word line supply charge pump and regulator for DRAM (2000-04-25),
7. 5828620 - High voltage boosted word line supply charge pump and regulator for DRAM (1998-10-27),
8. 5699313 - High voltage boosted word line supply charge pump and regulator for dram (1997-12-16),
9. 5574681 - Method for DRAM sensing current control (1996-11-12),
10. 5414662 - Dynamic random access memory using imperfect isolating transistors (1995-05-09),
11. 5406523 - High voltage boosted word line supply charge pump and regulator for DRAM (1995-04-11),
12. 5267201 - High voltage boosted word line supply charge pump regulator for DRAM (1993-11-30),

Title: Innovations of Robert F. Harland in Dynamic Random Access Memory Technology

Introduction

Robert F. Harland, a prolific inventor based in Carp, California, holds an impressive portfolio of 12 patents that showcase his contributions to the field of memory technology, particularly in dynamic random access memory (DRAM). His innovative designs and methodologies have laid important groundwork for advancements in memory efficiency and performance.

Latest Patents

Among his latest patents, two noteworthy inventions stand out:

1. **Dynamic Random Access Memory Using Imperfect Isolating Transistors** - This patent describes an apparatus and methods for controlling the sensing of bit lines, enhancing the efficiency of charge distribution. The design includes multiple bit storage capacitors and a folded bit line that help in achieving full logic levels quickly.

2. **DRAM Boosted Voltage Supply** - This invention outlines a circuit to provide an output voltage for a DRAM word line, potentially reaching up to 2V. It comprises a fully switched boosting circuit, which prevents voltage reduction and utilizes a regulator to optimize the operation of memory cell access transistors.

Career Highlights

Robert F. Harland’s career features significant roles at notable companies, including Mosaid Technologies Corporation and Mosaid, Inc. His work in these organizations has not only contributed to his personal patent portfolio but has also advanced the capabilities of memory technology used in various electronic devices.

Collaborations

Throughout his career, Harland collaborated with talented professionals like Richard C. Foss and Peter B. Gillingham. These partnerships have driven innovation and resulted in the successful execution of pioneering projects in the field.

Conclusion

Robert F. Harland’s contributions to dynamic random access memory technology have significantly impacted the industry. With his extensive patent portfolio and collaborations, he continues to be a prominent figure in the landscape of memory innovation, paving the way for future advancements.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…