Robert B Eisenhuth

This inventor holds 25 USPTO granted patents and 1 published patent application and 3 EPO patents. Top assignees: Micron Technology Incorporated, Storage Technology Corporation. Active years: 1995-2024.

USPTO Granted Patents = 25 (Patent Applications = 1)

% Patents Active = 80.0

EPO Patents = 3 (Patent Applications = 3)

Average Co-Inventor Count = 1.9

ph-index = 5

Forward Citations = 58(Granted Patents)

Company Filing History:

24 out of 39,102

Micron Technology Incorporated

patents

1 out of 947

Storage Technology Corporation

patents

Years Active: 1995-2024

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25 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11934688 - Read threshold adjustment techniques for non-binary memory cells (2024-03-19),

2. 11854641 - Read threshold adjustment techniques for memory (2023-12-26),

3. 11804856 - Advanced bitwise operations and apparatus in a multi-level system with nonvolatile memory (2023-10-31),

4. 11789817 - Error correction for internal read operations (2023-10-17),

5. 11494114 - Read threshold adjustment techniques for non-binary memory cells (2022-11-08),

6. 11450382 - Memory cell state in a valley between adjacent data states (2022-09-20),

7. 11443828 - Read threshold adjustment techniques for memory (2022-09-13),

8. 11416393 - Efficient scrambling and encoding for copyback procedures using precomputed values (2022-08-16),

9. 11336303 - Advanced bitwise operations and apparatus in a multi-level system with nonvolatile memory (2022-05-17),

10. 10997070 - Efficient scrambling and encoding for copyback procedures using precomputed values (2021-05-04),

11. 10923211 - Efficient scrambling and encoding for copyback procedures in a memory subsystem (2021-02-16),

12. 10811090 - Memory cell state in a valley between adjacent data states (2020-10-20),

13. 10740173 - Advanced bitwise operations and apparatus in a multi-level system with nonvolatile memory (2020-08-11),

14. 10498367 - Progressive effort decoder architecture (2019-12-03),

15. 10355815 - Bitwise operations and apparatus in a multi-level system (2019-07-16),

As an AI assistant for idiyas.com, here is the article about the inventor Robert B Eisenhuth:

Title: Unveiling the Innovations of Robert B Eisenhuth

Introduction:

Robert B Eisenhuth is a prolific inventor based in Boulder, CO, USA, renowned for his groundbreaking contributions to the field of memory systems and read threshold adjustment techniques.

Latest Patents:

With an impressive portfolio of 25 patents, Robert's latest innovations focus on read threshold adjustment techniques for non-binary memory cells and memory systems. These patents showcase his expertise in error recovery strategies and enhancing the efficiency and reliability of memory devices.

Career Highlights:

Robert B Eisenhuth has made significant strides in the tech industry, having worked with prominent companies such as Micron Technology Incorporated and Storage Technology Corporation. His contributions have played a crucial role in shaping the landscape of memory technology.

Collaborations:

Throughout his career, Robert has collaborated with industry experts, including his coworkers Stephen P Van Aken and Sivagnanam Parthasarathy. These collaborations have led to the development of cutting-edge solutions and advancements in memory systems.

Conclusion:

In conclusion, Robert B Eisenhuth's innovative spirit and dedication to advancing memory technologies have solidified his reputation as a leading inventor in the field. His patents and contributions continue to pave the way for future developments in the industry, making him a trailblazer in the world of innovations and inventions.