This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Intel Ndtm US LLC. Active years: 2025.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2025
Title: The Innovative Contributions of Rifat Ferdous in 3D NAND Technology
Introduction
Rifat Ferdous is an accomplished inventor based in Lafayette, Indiana, whose work has significantly impacted the field of memory technology. With one patent to his name, he continues to push the boundaries of innovation in the realm of 3D NAND memory arrays.
Latest Patents
Ferdous holds a patent entitled "Staggered Read Recovery for Improved Read Window Budget in a Three Dimensional (3D) NAND Memory Array." This inventive concept addresses the crucial processes involved in reading operations within 3D NAND arrays. By implementing a staggered transitioning approach, where the wordlines in a 3D NAND array are shifted to ground in phases, his innovation enhances the performance and efficiency of memory retrieval. The design includes the management of multiple vertically stacked wordlines, allowing for improved control over the voltage transitions during read operations.
Career Highlights
Currently, Rifat Ferdous is employed at Intel NDTM US LLC, where he contributes his expertise in memory technologies. His role at a leading technology company underscores his importance in the domain of semiconductor innovation. Ferdous has demonstrated a keen ability to solve complex engineering challenges, which is evident in his patent and ongoing work.
Collaborations
Working alongside fellow innovator Sung-Taeg Kang, Ferdous has engaged in collaborative efforts that harness their combined knowledge to further advance memory technology. Their partnership exemplifies the power of teamwork in pioneering new technological solutions and highlights the importance of collaboration within research and development environments.
Conclusion
Rifat Ferdous's inventive contributions to the field of 3D NAND technology exemplify his role as a key figure in innovation. His patent reflects a significant advancement in memory efficiency and performance. As he continues his journey at Intel NDTM US LLC, it remains to be seen what further innovations he will introduce to the world of technology.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile