Intel Ndtm US LLC

Rifat Ferdous

Ali Khakifirooz

Rohit Sudhir Shenoy

Sung-Taeg Kang

Dipanjan Basu

At the end of or after a reading operation in a 3D (three dimensional) NAND array, the wordlines of the 3D NAND array can be transitioned to ground in a staggered manner. The 3D NAND array includes a 3D stack with multiple wordlines vertically stacked, including a bottom-most wordline, a top-most wordline, and middle wordlines between the bottom-most wordline and the top-most wordline. A controller that controls the reading can set the multiple wordlines to a high voltage at the end or after the reading operation and then transition a selected wordline of the multiple wordlines from the high voltage to ground prior to transitioning the other wordlines to ground. Thus, the controller will transition the other wordlines from the high voltage to ground after a delay.

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Lafayette, IN, United States of America

Rifat Ferdous