This inventor holds 1 USPTO granted patent. Top assignee: Intel Ndtm US LLC. Active years: 2026.
Company Filing History:
Years Active: 2026
Title: Rifat Ferdous: Innovator in 3D NAND Memory Technology
Introduction
Rifat Ferdous is a notable inventor based in Santa Clara, California. He has made significant contributions to the field of memory technology, particularly in the development of 3D NAND Flash memory. His innovative approach has led to advancements that enhance the performance and efficiency of memory devices.
Latest Patents
Rifat Ferdous holds 1 patent for his invention titled "Apparatus and method to improve read window budget in a three dimensional NAND memory." This patent addresses the gap width in a threshold voltage (Vt) distribution for a 3D NAND Flash cell. The invention improves the read window budget by performing a touchup program on a selected portion of the word lines in a block after all of the word lines in the block have been programmed.
Career Highlights
Rifat Ferdous is currently employed at Intel NDTM US LLC, where he continues to work on cutting-edge technologies in the semiconductor industry. His role at Intel allows him to collaborate with other talented engineers and researchers to push the boundaries of memory technology.
Collaborations
Throughout his career, Rifat has worked alongside esteemed colleagues such as Sung-Taeg Kang and Golnaz Karbasian. These collaborations have fostered an environment of innovation and creativity, leading to advancements in their respective fields.
Conclusion
Rifat Ferdous is a prominent figure in the realm of 3D NAND memory technology, with a focus on improving the efficiency of memory devices. His contributions and collaborations continue to shape the future of semiconductor technology.