Location History:
- Akishima, JP (2001 - 2011)
- Tokyo, JP (2012 - 2014)
Company Filing History:
5 out of 336 
3 out of 3,781 
3 out of 7,525 
Years Active: 2001-2014
Title: Rie Nishiyama: Innovator in Semiconductor Technology
Introduction
Rie Nishiyama is a prominent inventor based in Akishima, Japan. She has made significant contributions to the field of semiconductor technology, holding a total of 10 patents. Her work focuses on level conversion circuits and integrated circuit devices, showcasing her expertise in this specialized area.
Latest Patents
One of her latest patents involves a level conversion circuit and a semiconductor integrated circuit device employing this circuit. This innovation is designed for integrated circuit devices that utilize multiple high- and low-voltage power supplies. The circuit provides inputs to differential inputs, enhancing the functionality of the device. In the level-down circuit, MOS transistors that are not supplied with 3.3 V between the gate and drain and between the gate and source utilize a thin oxide layer. Additionally, the level-up circuit incorporates a logic operation function, further advancing the capabilities of semiconductor devices.
Career Highlights
Throughout her career, Rie Nishiyama has worked with notable companies, including Hitachi ULSI Systems Co., Ltd. Her experience in these organizations has allowed her to develop and refine her innovative ideas in semiconductor technology.
Collaborations
Rie has collaborated with esteemed colleagues such as Kazuo Tanaka and Hiroyuki Mizuno. These partnerships have contributed to her success and the advancement of her projects.
Conclusion
Rie Nishiyama's contributions to semiconductor technology through her patents and collaborations highlight her as a key figure in the field. Her innovative work continues to influence the development of advanced electronic devices.