Clinton, NJ, United States of America

Richard W Hoffman, Jr

This inventor holds 3 USPTO granted patents and 3 published patent applications. Top assignees: Emcore Corporation, Iqe Rf, LLC. Active years: 2010-2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Richard W Hoffman, Jr. Retrieved from https://idiyas.com/inventor/richard-w-hoffman-jr

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 3 

% Patents Active = 33.3

Average Co-Inventor Count = 4.0

ph-index = 2

Forward Citations = 10(Granted Patents)


Company Filing History:


Years Active: 2010-2012

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3 patents (USPTO):Explore Patents

Title: Richard W Hoffman, Jr: Innovator in Compound Semiconductor Technology

Introduction

Richard W Hoffman, Jr is a notable inventor based in Clinton, NJ (US). He has made significant contributions to the field of compound semiconductor technology, holding a total of 3 patents. His work focuses on integrating various active devices on common semiconductor wafers, showcasing his expertise in this advanced area of research.

Latest Patents

Hoffman’s latest patents include innovative designs for integrated devices on a common compound semiconductor III-V wafer. One of his patents describes a III-V compound semiconductor structure that comprises epitaxial structures, including an integrated pair of different types of active devices. This semiconductor structure features a semi-insulating substrate of a compound semiconductor III-V material, with a concentration profile of dopant material that decreases smoothly across the interface between the substrate and the first epitaxial structure.

Another patent details an integrated pair of HBT and FET transistors that share a common compound semiconductor III-V epitaxial layer. This design includes multiple epitaxial structures, with the first epitaxial structure forming a portion of the HBT transistor. The concentration profile of a first contaminant, which contributes electrical charge, also decreases smoothly across the interface between the semi-insulating substrate and the first epitaxial structure.

Career Highlights

Throughout his career, Richard W Hoffman, Jr has worked with prominent companies in the semiconductor industry, including Emcore Corporation and IQE RF, LLC. His experience in these organizations has allowed him to develop and refine his innovative ideas in semiconductor technology.

Collaborations

Hoffman has collaborated with talented individuals in his field, including Victor Labyuk and Sherry Qianwen Ye. These partnerships have contributed to the advancement of his research and the successful development of his patents.

Conclusion

Richard W Hoffman, Jr is a distinguished inventor whose work in compound semiconductor technology has led to significant advancements in the field. His innovative patents and collaborations reflect his commitment to pushing the boundaries of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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