The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 22, 2011
Filed:
May. 12, 2010
Paul Cooke, Port Monmouth, NJ (US);
Richard W. Hoffman, Jr., Clinton, NJ (US);
Victor Labyuk, Hackettstown, NJ (US);
Sherry Qianwen YE, Bridgewater, NJ (US);
Paul Cooke, Port Monmouth, NJ (US);
Richard W. Hoffman, Jr., Clinton, NJ (US);
Victor Labyuk, Hackettstown, NJ (US);
Sherry Qianwen Ye, Bridgewater, NJ (US);
Emcore Corporation, Albuquerque, NM (US);
Abstract
An integrated pair of HBT and FET transistors shares a common compound semiconductor III-V epitaxial layer. The integrated pair of transistors includes a semi-insulating substrate of a compound semiconductor III-V material, a first epitaxial structure disposed on top of the substrate, a second epitaxial structure on top of the first epitaxial structure, and a third epitaxial structure disposed on top of the second epitaxial structure. The first epitaxial structure forms a portion of the HBT transistor. A concentration profile of a first contaminant, which contributes electrical charge, decreases substantially smoothly across an interface between the semi-insulating substrate and the first epitaxial structure. In some cases, the interface is free of a second contaminant that was present, during formation of the epitaxial structures, in a chamber in which the epitaxial structures were formed.