The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 20, 2010
Filed:
Jul. 28, 2006
Applicants:
Paul Cooke, Port Monmouth, NJ (US);
Richard W. Hoffman, Jr., Clinton, NJ (US);
Victor Labyuk, Hackettstown, NJ (US);
Sherry Qianwen YE, Bridgewater, NJ (US);
Inventors:
Paul Cooke, Port Monmouth, NJ (US);
Richard W. Hoffman, Jr., Clinton, NJ (US);
Victor Labyuk, Hackettstown, NJ (US);
Sherry Qianwen Ye, Bridgewater, NJ (US);
Assignee:
IQE RF, LLC, Somerset, NJ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of fabricating an epitaxial compound semiconductor III-V wafer suitable for the subsequent fabrication of at least two different types of integrated active devices (such as an HBT and a FET) on such wafer by providing a substrate; growing a first epitaxial structure on the substrate; and growing a second epitaxial structure on the first epitaxial structure.