Chandler, AZ, United States of America

Richard J DeSouza

This inventor holds 2 USPTO granted patents. Top assignee: Nxp USA, Inc.. Active years: 2017-2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Richard J DeSouza. Retrieved from https://idiyas.com/inventor/richard-j-desouza

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2017-2018

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2 patents (USPTO):Explore Patents

Title: Richard J DeSouza: Innovator in Semiconductor Technology

Introduction

Richard J DeSouza is a prominent inventor based in Chandler, AZ (US). He has made significant contributions to the field of semiconductor technology, holding 2 patents that showcase his innovative spirit and technical expertise.

Latest Patents

DeSouza's latest patents include a semiconductor device with a non-isolated power transistor featuring integrated diode protection. This device is designed with one or more integrated breakdown protection diodes in non-isolated power transistor devices and electronic apparatus. The methods for fabricating these devices highlight his commitment to advancing semiconductor technology.

Career Highlights

Richard J DeSouza is currently employed at NXP USA, Inc., where he continues to push the boundaries of semiconductor innovation. His work has been instrumental in developing devices that enhance the reliability and efficiency of electronic systems.

Collaborations

Throughout his career, DeSouza has collaborated with notable colleagues, including Patrice M Parris and Hubert Martin Bode. These partnerships have contributed to the successful development of his patented technologies.

Conclusion

Richard J DeSouza stands out as a key figure in the semiconductor industry, with a focus on innovative solutions that improve electronic devices. His contributions are paving the way for future advancements in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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