The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 24, 2018
Filed:
Dec. 14, 2016
Applicant:
Nxp Usa, Inc., Austin, TX (US);
Inventors:
Patrice M. Parris, Phoenix, AZ (US);
Hubert M. Bode, Haar, DE;
Weize Chen, Phoenix, AZ (US);
Richard J. DeSouza, Chandler, AZ (US);
Andreas Laudenbach, Haag, DE;
Kurt U. Neugebauer, Vaterstetten, DE;
Assignee:
NXP USA, Inc., Austin, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/10 (2006.01); H01L 29/08 (2006.01); H01L 29/06 (2006.01); H01L 29/36 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7823 (2013.01); H01L 29/063 (2013.01); H01L 29/0619 (2013.01); H01L 29/0878 (2013.01); H01L 29/1095 (2013.01); H01L 29/36 (2013.01);
Abstract
A semiconductor device configured with one or more integrated breakdown protection diodes in non-isolated power transistor devices and electronic apparatus, and methods for fabricating the devices.