Rern-Hurng Larn

Title: Rern-Hurng Larn: Innovator in Static Random Access Memory Technology

Introduction

Rern-Hurng Larn is a notable inventor based in Taipei, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of static random access memory (SRAM) cell structures. With a total of five patents to his name, Larn's work has had a considerable impact on the industry.

Latest Patents

Larn's latest patents focus on innovative manufacturing methods for SRAM. One of his patents describes a static random access memory (SRAM) cell structure that includes a substrate, a transistor, an upper electrode, and a capacitor dielectric layer. This design features a device isolation structure within the substrate to define an active region, which contains an opening. The transistor is positioned over this active region, with its source region adjacent to the opening. The upper electrode is designed to completely fill the opening, while the capacitor dielectric layer is situated between the upper electrode and the substrate. This inventive approach enhances the efficiency and performance of SRAM technology.

Career Highlights

Throughout his career, Rern-Hurng Larn has worked with prominent companies in the semiconductor industry, including United Microelectronics Corporation and United Microelectric Corporation. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking advancements in memory technology.

Collaborations

Larn has collaborated with several talented individuals in his field, including Tzung-Han Lee and Kuang-Pi Lee. These partnerships have fostered innovation and have been instrumental in the development of new technologies.

Conclusion

Rern-Hurng Larn is a distinguished inventor whose work in SRAM technology has paved the way for advancements in the semiconductor industry. His innovative patents and collaborations highlight his commitment to enhancing memory technology.