The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 18, 2007
Filed:
May. 02, 2006
Tzung-han Lee, Taipei, TW;
Kuang-pi Lee, Fongyuan, TW;
Wen-jeng Lin, Pan-Chiao, TW;
Rern-hurng Larn, Taipei, TW;
Tzung-Han Lee, Taipei, TW;
Kuang-Pi Lee, Fongyuan, TW;
Wen-Jeng Lin, Pan-Chiao, TW;
Rern-Hurng Larn, Taipei, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A static random access memory (SRAM) cell structure at least comprising a substrate, a transistor, an upper electrode and a capacitor dielectric layer. A device isolation structure is set up in the substrate to define an active region. The active region has an opening. The transistor is set up over the active region of the substrate. The source region of the transistor is next to the opening. The upper electrode is set up over the opening such that the opening is completely filled. The capacitor dielectric layer is set up between the upper electrode and the substrate.