Hefei, China

Renhu Li

This inventor holds 1 USPTO granted patent. Top assignee: Changxin Memory Technologies, Inc.. Active years: 2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Renhu Li. Retrieved from https://idiyas.com/inventor/renhu-li

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2025

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1 patent (USPTO):Explore Patents

Title: Renhu Li: Innovator in Semiconductor Technology

Introduction

Renhu Li is a prominent inventor based in Hefei, China. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor structure and its manufacturing method.

Latest Patents

Renhu Li holds a patent for a semiconductor structure and manufacturing method. The patent describes a semiconductor structure that includes a substrate with trenches arranged in parallel intervals. The word line (WL) structure is located within these trenches and consists of a dielectric layer and a conductive layer. The dielectric layer covers the bottom surface and sidewall of the conductive layer, which is composed of a first conductive layer and a second conductive layer. Notably, a first component is doped in the second conductive layer.

Career Highlights

Renhu Li is currently employed at Changxin Memory Technologies, Inc. His work at this company has been instrumental in advancing semiconductor technologies. He has demonstrated a strong commitment to innovation and excellence in his field.

Collaborations

Renhu Li has collaborated with notable colleagues, including Ming-Hung Hsieh and Yong Lu. These partnerships have contributed to the success of his projects and the advancement of semiconductor research.

Conclusion

Renhu Li is a key figure in semiconductor innovation, with a focus on developing advanced structures and manufacturing methods. His contributions continue to shape the future of technology in this critical field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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