Changxin Memory Technologies, Inc.

Renhu Li

Yong Lu

ZhiCheng Shi

Ming-Hung Hsieh

The present disclosure provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes a substrate and a word line (WL) structure, wherein the substrate includes trenches arranged in parallel intervals; the WL structure is located in the trenches, and includes a dielectric layer and a conductive layer; the dielectric layer covers a bottom surface and a sidewall of the conductive layer; the conductive layer includes a first conductive layer and a second conductive layer; and a first component is doped in the second conductive layer.

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Hefei, China

Renhu Li