Yorktown Heights, NY, United States of America

Renate Bergmann


Average Co-Inventor Count = 4.0

ph-index = 2

Forward Citations = 19(Granted Patents)


Location History:

  • München, DE (2002)
  • Yorktown Heights, NY (US) (2009)

Company Filing History:


Years Active: 2002-2009

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2 patents (USPTO):Explore Patents

Title: Renate Bergmann: Innovator in Memory Technology

Introduction

Renate Bergmann is a prominent inventor based in Yorktown Heights, NY (US). She has made significant contributions to the field of memory technology, holding two patents that showcase her innovative spirit and technical expertise.

Latest Patents

Her latest patents include an "Integrated circuit having an insulated memory" and a "Method for fabricating a ferroelectric memory configuration." The first patent describes a memory cell that incorporates phase-change material between electrodes, enhancing its functionality through specific insulation materials. The second patent outlines a comprehensive method for fabricating a ferroelectric memory configuration, detailing the steps involved in creating memory cells with select and short-circuit transistors.

Career Highlights

Renate works at Infineon Technologies AG, where she applies her knowledge and skills to advance memory technology. Her work has been instrumental in developing innovative solutions that address the growing demands of modern electronics.

Collaborations

Some of her notable coworkers include Jan Boris Philipp and Thomas Happ, who contribute to the collaborative environment that fosters innovation at Infineon Technologies AG.

Conclusion

Renate Bergmann's contributions to memory technology through her patents and work at Infineon Technologies AG highlight her role as a leading inventor in her field. Her innovative approaches continue to shape the future of memory solutions.

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