The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2009
Filed:
Oct. 27, 2005
Jan Boris Philipp, Peekskill, NY (US);
Thomas Happ, Tarrytown, NY (US);
Renate Bergmann, Yorktown Heights, NY (US);
Jan Boris Philipp, Peekskill, NY (US);
Thomas Happ, Tarrytown, NY (US);
Renate Bergmann, Yorktown Heights, NY (US);
Infineon Technologies AG, Neubiberg, DE;
Abstract
A memory cell includes a first electrode, a second electrode, and phase-change material between the first electrode and the second electrode. The phase-change material defines a narrow region. The memory cell includes first insulation material having a first thermal conductivity and contacting the phase-change material. A maximum thickness of the first insulation material contacts the narrow region. The memory cell includes a second insulation material having a second thermal conductivity greater than the first thermal conductivity and contacting the first insulation material.