This inventor holds 2 USPTO granted patents and 1 published patent application. Top assignee: Industrial Technology Research Institute. Active years: 2013.
Company Filing History:
Years Active: 2013
Title: Ren-Hao Jiang: Innovator in Light Emitting Diode Technology
Introduction
Ren-Hao Jiang is a prominent inventor based in Taichung, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of light emitting diodes (LEDs). With a total of 2 patents to his name, Jiang's work has advanced the efficiency and functionality of LED devices.
Latest Patents
Jiang's latest patents include innovative designs for light emitting diodes. One of his patents describes a light emitting diode that incorporates a GaN substrate, featuring a first type semiconductor layer, a light emitting layer, and a second type semiconductor layer. This design allows for the emission of light within the wavelength range of 375 nm to 415 nm. Another patent focuses on a nitride semiconductor LED device, which includes an N-type doped layer, an active layer with a quantum well structure, and a P-type doped layer. These advancements contribute to the ongoing evolution of LED technology.
Career Highlights
Ren-Hao Jiang is affiliated with the Industrial Technology Research Institute, where he continues to push the boundaries of semiconductor research. His work has not only garnered patents but has also positioned him as a key figure in the development of next-generation LED technologies.
Collaborations
Jiang has collaborated with notable colleagues such as Yi-Keng Fu and Yen-Hsiang Fang. These partnerships have fostered a collaborative environment that enhances innovation and research outcomes.
Conclusion
Ren-Hao Jiang's contributions to the field of light emitting diodes exemplify the impact of innovative thinking in technology. His patents and collaborations reflect a commitment to advancing semiconductor technology, making him a significant figure in the industry.